Analysis and Design of Analog Integrated Circuits by Meyer, Hurst, Gray, Lewis

By Meyer, Hurst, Gray, Lewis

The 5th variation keeps its completeness, updates the insurance of bipolar applied sciences, and complements the dialogue of bicmos. It offers a extra unified therapy of electronic and analog circuit layout whereas strengthening the assurance of cmos. The bankruptcy on non-linear analog circuits has been got rid of and bankruptcy eleven has been up to date to incorporate an operational amplifier instance. types for integrated-circuit lively units bipolar, mos, and bicmos integrated-circuit know-how single-transistor and multiple-transistor amplifiers present mirrors, energetic lots, and references output phases operational amplifiers with single-ended outputs frequency reaction of built-in circuits suggestions frequency reaction and balance of suggestions amplifiers nonlinear analog circuits noise in built-in circuits absolutely differential operational amplifiers

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86) indicates that βF is proportional to IC at very low collector currents. 82). (In practice the measured curve of IB versus VBE in Fig. 88) gives βFH 2 ISH 1 βFM IS IC Thus βF decreases rapidly at high collector currents. In addition to the effect of high-level injection, the value of βF at high currents is also decreased by the onset of the Kirk effect,13 which occurs when the minority-carrier concentration in the collector becomes comparable to the donor-atom doping density. The base region of the transistor then stretches out into the collector and becomes greatly enlarged.

20 can be very important at high bias currents or for high-frequency operation, they are usually omitted from the equivalent circuit for low-frequency calculations, particularly for collector bias currents less than 1 mA. EXAMPLE Derive the complete small-signal equivalent circuit for a bipolar transistor at IC = 1 mA, VCB = 3 V, and VCS = 5 V. 65 V, β0 = 100, ␶F = 10 ps, VA = 20 V, rb = 300 , rc = 50 , rex = 5 , rμ = 10 β0 ro . 1. Either a value can be determined by computer or a reasonable estimation is to double Cje0 .

Heavily doped n-type source and drain regions are fabricated in a p-type substrate (often called the body). 26 Typical enhancement-mode NMOS structure. 5 Large-Signal Behavior of Metal-Oxide-Semiconductor Field-Effect Transistors 39 a conductive gate material (metal or polycrystalline silicon) covers the oxide between source and drain. Note that the gate is horizontal in Fig. 26, and we will use this orientation in all descriptions of the physical operation of MOS devices. In operation, the gate-source voltage modifies the conductance of the region under the gate, allowing the gate voltage to control the current flowing between source and drain.

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